document number: 94411 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 1 phase control thyristors (hockey puk version), 960 a st380chpbf series vishay high power products features ? center amplifying gate ? metal case with ceramic insulator ? international standard case to-200ab (e-puk) ? extended temperature range ? low profile hockey puk to increase current-carrying capability ? lead (pb)-free ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 960 a to-200ab (e-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 960 a t hs 80 c i t(rms) 2220 a t hs 25 c i tsm 50 hz 12 500 a 60 hz 13 000 i 2 t 50 hz 782 ka 2 s 60 hz 713 v drm /v rrm 400 to 600 v t q typical 100 s t j - 40 to 150 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st380ch..c 04 400 500 100 06 600 700
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94411 2 revision: 11-aug-08 st380chpbf series vishay high power products phase control thyristors (hockey puk version), 960 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 960 (440) a 80 (110) c maximum rms on-state current i t(rms) dc at 25 c heatsink temperature double side cooled 2220 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 12 500 t = 8.3 ms 13 000 t = 10 ms 100 % v rrm reapplied 10 500 t = 8.3 ms 11 000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 782 ka 2 s t = 8.3 ms 713 t = 10 ms 100 % v rrm reapplied 553 t = 8.3 ms 505 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 7820 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.85 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.88 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.25 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.24 maximum on-state voltage v tm i pk = 2900 a, t j = t j maximum, t p = 10 ms sine pulse 1.58 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 550 a, t j = t j maximum, di/dt = 40 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 100 ma
document number: 94411 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 3 st380chpbf series phase control thyristors (hockey puk version), 960 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 150 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.5 - v t j = 25 c 1.8 3.0 t j = 150 c 1.0 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 150 c maximum storage temperature range t stg maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.09 k/w dc operation double side cooled 0.04 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.02 dc operation double side cooled 0.01 mounting force, 10 % 9800 (1000) n (kg) approximate weight 83 g case style see dimensions - link at the end of datasheet to-200ab (e-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.010 0.011 0.007 0.007 t j = t j maximum k/w 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94411 4 revision: 11-aug-08 st380chpbf series vishay high power products phase control thyristors (hockey puk version), 960 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics 40 50 60 70 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 700 800 30 60 90 120 180 average on-state current (a) conduc tion angle maximum allowable heatsink temperature (c) st380ch..c series (single side cooled) r (dc) = 0.09 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 200 400 600 800 1000 1200 1400 dc 30 60 90 120 180 average on-state current (a) conduc tion period maximum allowable heatsink temperature (c) st3 8 0 c h . . c se r i e s (single side cooled) r (dc) = 0.09 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 140 150 040080012001600 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st380ch..c series (double side cooled) r (dc) = 0.04 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 500 1000 1500 2000 2500 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c ) st380ch..c se rie s (double side cooled) r (dc) = 0.04 k/ w thj-hs 0 500 1000 1500 2000 2500 0 400 800 1200 1600 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st380ch..c series t = 150c j 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 dc 180 120 90 60 30 rm s li m i t conduc tion period maximum average on-state power loss (w) average on-state current (a) st380ch..c series t = 150c j
document number: 94411 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 5 st380chpbf series phase control thyristors (hockey puk version), 960 a vishay high power products fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 5000 6000 7000 8000 9000 10000 11000 12000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) st3 8 0 c h . . c se r i e s init ia l t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any ra ted loa d cond ition and with ra ted v ap plied following surge. rrm 5000 6000 7000 8000 9000 10000 11000 12000 13000 0.01 0.1 1 pu lse tr a in d u ra t io n ( s) versus pulse train duration. control peak half sine wave on-state current (a) initia l t = 150c no volta g e rea pplied ra t e d v re a p p l i e d rrm j st380ch..c serie s maximum non repetitive surge current of conduction may not be maintained. 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 t = 2 5 c j insta nta neous on-sta te current (a) instantaneous on-state voltage (v) st380ch..c se rie s t = 150c j 0.001 0.01 0.1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thj-hs steady state value r = 0.09 k/ w (single side cooled) r = 0.04 k/ w (double side cooled) (dc operation) thj-hs thj-hs st380c h..c se rie s transient thermal impedance z (k/w)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94411 6 revision: 11-aug-08 st380chpbf series vishay high power products phase control thyristors (hockey puk version), 960 a fig. 11 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) t j=25 c tj = - 4 0 c (2) (3) instantaneous gate current (a) instant aneous ga te volt age (v) a) recommended load line for b) recommended load line for <=30% ra ted d i/ d t : 10v, 10ohms fr e q u e n c y li m i t e d b y pg ( a v ) rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s t j=150 c de vic e : st380ch..c se rie s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms rectangular gate pulse (1) (4) 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - ch = ceramic puk, high temperature 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - c = puk case to-200ab (e-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 9 - lead (pb)-free 8 - critical dv/dt: none = 500 v/s (standard selection) l = 1000 v/s (special selection) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) device code 5 1 3 24 6789 st 38 0 ch 06 c 1 - pbf links to related documents dimensions http://www.vishay.com/doc?95075
document number: 95075 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (e-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) min. 0.3 (0.01) min. 25.3 (0.99) dia. max. 14.1/15.1 (0.56/0.59) 25 5 25.3 (0.99) dia. max. 40.5 (1.59) dia. max. 42 (1.65) max. anode to gate creepage distance: 11.18 (0.44) minimum strike distance: 7.62 (0.30) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) gate terminal for 1.47 (0.06) dia. pin receptacle 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
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